SI4880DY-T1-GE3

Product Overview

Category

The SI4880DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4880DY-T1-GE3 is typically available in a surface-mount DPAK (TO-252) package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 48A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS) ±20V

Detailed Pin Configuration

The SI4880DY-T1-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-state resistance for minimal power dissipation
• Fast switching speed for efficient power control
• High current handling capability for robust performance

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-state resistance for reduced power losses
• Fast switching speed for improved efficiency

Disadvantages

• Higher gate capacitance compared to some alternative models
• Sensitive to static electricity and voltage spikes

Working Principles

The SI4880DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications, including: - Switching power supplies - Motor control circuits - Battery management systems - LED lighting drivers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI4880DY-T1-GE3 include: - IRF4905PbF - FDP8870 - AOD4184

In conclusion, the SI4880DY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, with its low on-state resistance, high current handling capability, and fast switching speed making it an essential component in modern electronic systems.

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