SI4922BDY-T1-GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, converters, and motor control
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: DSO-8
Essence: Power management
Packaging/Quantity: Tape & Reel, 3000 units

Specifications

• Voltage - Drain-Source Breakdown (Vds): 30V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 60A, 10V
• Input Capacitance (Ciss) @ Vds: 6800pF @ 15V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

1. Gate
2. Source
3. Drain
4. N/C
5. N/C
6. Drain
7. Source
8. Gate

Functional Features

• Low gate charge
• Improved dv/dt capability
• Avalanche energy rated
• RoHS compliant

Advantages and Disadvantages

Advantages: - High efficiency - Fast switching speed - Low on-resistance

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

The SI4922BDY-T1-GE3 operates based on the principles of field-effect transistors, utilizing a voltage-controlled input to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for various applications including: - DC-DC converters - Motor drives - Battery management systems - LED lighting - Power supplies

Detailed and Complete Alternative Models

1. SI4922BDY-T1-E3
2. SI4922BDY-T1-RE3
3. SI4922BDY-T1-E3-GE3
4. SI4922BDY-T1-RE3-GE3

This completes the entry for SI4922BDY-T1-GE3, providing comprehensive information about its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.