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SI4966DY-T1-GE3
Product Overview
Category
The SI4966DY-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- Low on-resistance
- High current handling capability
- Fast switching speed
- Low gate drive requirements
Package
The SI4966DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.
Essence
This MOSFET offers high efficiency and reliability in power management systems.
Packaging/Quantity
It is usually supplied in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 18A
- RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 22nC
Detailed Pin Configuration
The SI4966DY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power dissipation
- High current handling capability for robust performance
- Fast switching speed for efficient power management
Advantages
- Enhanced power efficiency
- Reliable performance in demanding applications
- Compact form factor for space-constrained designs
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to static discharge if mishandled
Working Principles
The SI4966DY-T1-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate and switch high-power loads.
Detailed Application Field Plans
The SI4966DY-T1-GE3 is well-suited for various power management applications, including: - DC-DC converters - Voltage regulators - Motor control circuits - Power supplies
Detailed and Complete Alternative Models
Some alternative models to the SI4966DY-T1-GE3 include: - SI2301DS-T1-GE3 - SI2337DS-T1-GE3 - SI7469DP-T1-GE3 - SI7850DP-T1-GE3
In conclusion, the SI4966DY-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it a versatile choice for engineers seeking efficient and reliable solutions.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI4966DY-T1-GE3 v technických řešeních
What is the maximum drain-source voltage of SI4966DY-T1-GE3?
- The maximum drain-source voltage of SI4966DY-T1-GE3 is 30V.
What is the typical on-resistance of SI4966DY-T1-GE3?
- The typical on-resistance of SI4966DY-T1-GE3 is 8.5mΩ at Vgs = 10V.
What is the maximum continuous drain current of SI4966DY-T1-GE3?
- The maximum continuous drain current of SI4966DY-T1-GE3 is 120A.
What is the gate threshold voltage of SI4966DY-T1-GE3?
- The gate threshold voltage of SI4966DY-T1-GE3 typically ranges from 1V to 2.5V.
What are the recommended operating temperature range for SI4966DY-T1-GE3?
- The recommended operating temperature range for SI4966DY-T1-GE3 is -55°C to 150°C.
What type of package does SI4966DY-T1-GE3 come in?
- SI4966DY-T1-GE3 comes in a DPAK (TO-252) package.
Is SI4966DY-T1-GE3 suitable for high-frequency applications?
- Yes, SI4966DY-T1-GE3 is suitable for high-frequency applications due to its low on-resistance and fast switching characteristics.
Can SI4966DY-T1-GE3 be used in automotive applications?
- Yes, SI4966DY-T1-GE3 is suitable for automotive applications as it meets the necessary standards and requirements.
What are some typical applications for SI4966DY-T1-GE3?
- Typical applications for SI4966DY-T1-GE3 include power management, motor control, DC-DC converters, and load switching.
Does SI4966DY-T1-GE3 have built-in protection features?
- SI4966DY-T1-GE3 has built-in protection features such as overcurrent protection and thermal shutdown to ensure safe operation in various technical solutions.