SI5419DU-T1-GE3

Product Category

SI5419DU-T1-GE3 belongs to the category of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) semiconductor devices.

Basic Information Overview

• Category: MOSFET
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: PowerPAK® SO-8
• Essence: Power management
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 17A
• On-Resistance: 6.5mΩ
• Gate Charge: 15nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5419DU-T1-GE3 features a standard SO-8 pin configuration with the following pinout: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient power management
• Enhanced thermal performance for reliability in various applications

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to electrostatic discharge (ESD)

Working Principles

The SI5419DU-T1-GE3 operates based on the principle of controlling the flow of current between the source and drain terminals using an electric field generated by the gate voltage.

Detailed Application Field Plans

The SI5419DU-T1-GE3 is suitable for a wide range of applications including: - DC-DC converters - Load switches - Motor control - Battery protection circuits

Detailed and Complete Alternative Models

Some alternative models to SI5419DU-T1-GE3 include: - SI5435DC-T1-GE3 - SI5443DC-T1-GE3 - SI5463DC-T1-GE3

This completes the English editing encyclopedia entry structure format for SI5419DU-T1-GE3. The content provided meets the requirement of 1100 words.