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SI5935DC-T1-E3
Product Overview
Category
The SI5935DC-T1-E3 belongs to the category of power MOSFETs.
Use
It is used for switching and amplifying electronic signals in various applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SI5935DC-T1-E3 is available in a compact and efficient package suitable for surface mount applications.
Essence
This MOSFET is designed to provide high performance and reliability in power management circuits.
Packaging/Quantity
The SI5935DC-T1-E3 is typically packaged in reels with a specific quantity per reel, as per industry standards.
Specifications
- Drain-Source Voltage (VDS): [specification]
- Continuous Drain Current (ID): [specification]
- On-Resistance (RDS(on)): [specification]
- Gate-Source Voltage (VGS): [specification]
- Total Gate Charge (Qg): [specification]
Detailed Pin Configuration
The SI5935DC-T1-E3 has a standard pin configuration with clearly defined connections for the drain, source, and gate terminals.
Functional Features
- High voltage capability for robust performance
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- Low gate charge for reduced drive requirements
Advantages
- Enhanced power efficiency
- Reliable performance in high-voltage applications
- Suitable for fast-switching circuits
- Reduced heat dissipation
Disadvantages
- May require careful handling due to sensitivity to static electricity
- Higher cost compared to standard MOSFETs
Working Principles
The SI5935DC-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
Detailed Application Field Plans
The SI5935DC-T1-E3 is well-suited for use in: - Switching power supplies - Motor control circuits - LED lighting applications - Battery management systems
Detailed and Complete Alternative Models
- SI5934DC-T1-E3
- SI5936DC-T1-E3
- SI5940DC-T1-E3
- SI5942DC-T1-E3
In conclusion, the SI5935DC-T1-E3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it a versatile choice for engineers and designers seeking reliable and efficient power switching solutions.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI5935DC-T1-E3 v technických řešeních
What is the maximum voltage rating of SI5935DC-T1-E3?
- The maximum voltage rating of SI5935DC-T1-E3 is 30V.
What is the typical on-resistance of SI5935DC-T1-E3?
- The typical on-resistance of SI5935DC-T1-E3 is 0.02 ohms.
What is the maximum continuous drain current of SI5935DC-T1-E3?
- The maximum continuous drain current of SI5935DC-T1-E3 is 80A.
What is the gate threshold voltage of SI5935DC-T1-E3?
- The gate threshold voltage of SI5935DC-T1-E3 is typically 1V.
Can SI5935DC-T1-E3 be used for automotive applications?
- Yes, SI5935DC-T1-E3 is suitable for automotive applications.
What is the operating temperature range of SI5935DC-T1-E3?
- The operating temperature range of SI5935DC-T1-E3 is -55°C to 150°C.
Does SI5935DC-T1-E3 have built-in ESD protection?
- Yes, SI5935DC-T1-E3 features built-in ESD protection.
What is the package type of SI5935DC-T1-E3?
- SI5935DC-T1-E3 comes in a PowerPAK® SO-8 package.
Is SI5935DC-T1-E3 RoHS compliant?
- Yes, SI5935DC-T1-E3 is RoHS compliant.
What are some common technical solutions that utilize SI5935DC-T1-E3?
- Common technical solutions that use SI5935DC-T1-E3 include power management, motor control, and battery protection in various electronic devices and systems.