SI7421DN-T1-GE3

Introduction

The SI7421DN-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Discrete Semiconductor
• Use: Power MOSFET for electronic circuits
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Power management and control
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) @ Vds: 2700pF @ 15V

Detailed Pin Configuration

The SI7421DN-T1-GE3 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S). The physical layout and pin assignment can be found in the datasheet provided by the manufacturer.

Functional Features

• High Efficiency: Low on-resistance ensures minimal power loss.
• Fast Switching Speed: Enables rapid response in electronic circuits.
• Low Gate Charge: Reduces drive requirements and improves efficiency.

Advantages and Disadvantages

Advantages

• High efficiency and low on-resistance
• Fast switching speed
• Compact DFN package for space-constrained designs

Disadvantages

• Sensitive to static discharge, requiring proper handling during assembly

Working Principles

The SI7421DN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals. This enables efficient power management and control in electronic circuits.

Detailed Application Field Plans

The SI7421DN-T1-GE3 finds extensive use in various applications, including: - DC-DC converters - Motor control systems - Power management modules - Battery protection circuits

Detailed and Complete Alternative Models

• SI7469DP-T1-GE3: Similar power MOSFET with enhanced thermal performance
• SI7157DP-T1-GE3: Lower on-resistance alternative for high-current applications
• SI7148DN-T1-GE3: Compact DFN package MOSFET with improved gate charge characteristics

In conclusion, the SI7421DN-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and compact packaging, making it an ideal choice for various power management and control applications.

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