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SI7461DP-T1-GE3

SI7461DP-T1-GE3

Product Overview

Category

The SI7461DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI7461DP-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is designed to provide efficient power management solutions with minimal losses.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 10A
  • RDS(ON) (Max) @ VGS = 10V: 6.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 13nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7461DP-T1-GE3 features a standard SO-8 pin configuration: 1. GATE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. DRAIN 7. DRAIN 8. SOURCE

Functional Features

  • Low on-resistance for reduced conduction losses
  • Fast switching speed for improved efficiency
  • Robust construction for reliable performance in various applications
  • Enhanced thermal characteristics for effective heat dissipation

Advantages and Disadvantages

Advantages

  • High efficiency in power management applications
  • Compact package size for space-constrained designs
  • Suitable for high-frequency switching applications

Disadvantages

  • Higher cost compared to traditional bipolar junction transistors (BJTs)
  • Sensitivity to electrostatic discharge (ESD) requires careful handling during assembly

Working Principles

The SI7461DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals. By applying an appropriate gate-source voltage, the MOSFET can efficiently regulate the power flow within a circuit.

Detailed Application Field Plans

The SI7461DP-T1-GE3 is well-suited for a wide range of applications, including: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems - LED lighting drivers

Detailed and Complete Alternative Models

For users seeking alternative models, the following MOSFETs can be considered: - SI7461DP-T1-GE2 - SI7461DP-T1-GE4 - IRF3205 - FDP8870

In conclusion, the SI7461DP-T1-GE3 offers a versatile and efficient solution for power management applications, with its high-performance characteristics and compact package design making it suitable for diverse electronic designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI7461DP-T1-GE3 v technických řešeních

  1. What is the SI7461DP-T1-GE3?

    • The SI7461DP-T1-GE3 is a P-channel MOSFET designed for use in various technical solutions, particularly in power management applications.
  2. What are the key features of the SI7461DP-T1-GE3?

    • The SI7461DP-T1-GE3 features a low on-resistance, high current capability, and a compact package, making it suitable for power switching and other applications.
  3. What are the typical applications of the SI7461DP-T1-GE3?

    • Typical applications include load switching, battery protection, power distribution, and other power management functions in portable devices, consumer electronics, and industrial equipment.
  4. What is the maximum drain-source voltage rating of the SI7461DP-T1-GE3?

    • The SI7461DP-T1-GE3 has a maximum drain-source voltage rating of -20V, making it suitable for low-voltage power management applications.
  5. What is the recommended operating temperature range for the SI7461DP-T1-GE3?

    • The SI7461DP-T1-GE3 is designed to operate within a temperature range of -55°C to 150°C, ensuring its suitability for various environmental conditions.
  6. Does the SI7461DP-T1-GE3 require external components for proper operation?

    • While the SI7461DP-T1-GE3 can function independently, it may require external components such as resistors, capacitors, and inductors depending on the specific application requirements.
  7. What is the input capacitance of the SI7461DP-T1-GE3?

    • The input capacitance of the SI7461DP-T1-GE3 is typically in the range of a few hundred picofarads, which should be considered in high-frequency switching applications.
  8. Is the SI7461DP-T1-GE3 suitable for automotive applications?

    • Yes, the SI7461DP-T1-GE3 is designed to meet automotive-grade standards, making it suitable for use in automotive power management systems.
  9. What are the recommended PCB layout considerations for using the SI7461DP-T1-GE3?

    • Proper thermal management, minimal parasitic inductance, and adequate trace widths for high-current paths are important considerations for the PCB layout when using the SI7461DP-T1-GE3.
  10. Where can I find detailed technical specifications and application notes for the SI7461DP-T1-GE3?

    • Detailed technical specifications and application notes for the SI7461DP-T1-GE3 can be found in the product datasheet provided by the manufacturer or distributor.