SI7463DP-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching and amplification in power electronics applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN2020D-3
• Essence: Advanced power management solution
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 10A
• RDS(ON): 6.5mΩ (typical) at VGS = 10V
• Gate Threshold Voltage: 1.5V (typical)
• Total Gate Charge: 15nC (typical)

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain

Functional Features

• Fast switching for improved efficiency
• Low on-resistance for reduced power loss
• Enhanced thermal performance for reliability

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Low power dissipation
  • Compact package size
• Disadvantages:
  • Sensitive to static electricity
  • Limited voltage rating

Working Principles

The SI7463DP-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

• Power supplies
• Motor control
• LED lighting
• Battery management systems

Detailed and Complete Alternative Models

1. SI7465DP-T1-E3
   • Similar specifications with enhanced voltage rating
2. SI7461DP-T1-E3
   • Lower current rating with similar characteristics

This comprehensive entry provides a detailed understanding of the SI7463DP-T1-E3 Power MOSFET, including its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.