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SI7489DP-T1-GE3
Product Overview
SI7489DP-T1-GE3 belongs to the category of power MOSFETs. It is commonly used in electronic circuits for switching and amplification purposes. The characteristics of this product include high efficiency, low on-resistance, and fast switching speed. It is typically packaged in a small outline package (SOP) and is available in tape and reel packaging with a specific quantity per reel.
Specifications
- Voltage Rating: 30V
- Continuous Drain Current: 10A
- On-Resistance: 8mΩ
- Package: SOP-8
- Packaging/Quantity: Tape and Reel, 2500 units per reel
Detailed Pin Configuration
The SI7489DP-T1-GE3 has a standard SOP-8 pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate
Functional Features
- High Efficiency: Enables energy-efficient operation.
- Fast Switching Speed: Facilitates rapid response in circuit applications.
- Low On-Resistance: Minimizes power loss and heat generation.
Advantages and Disadvantages
Advantages - High efficiency - Fast switching speed - Low on-resistance
Disadvantages - Sensitive to static electricity - Limited voltage rating
Working Principles
The SI7489DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.
Detailed Application Field Plans
This power MOSFET is widely used in various applications such as: - Power supplies - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to SI7489DP-T1-GE3 include: - SI7469DP-T1-GE3 - SI7459DP-T1-GE3 - SI7499DP-T1-GE3
In conclusion, the SI7489DP-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SI7489DP-T1-GE3 v technických řešeních
What is the SI7489DP-T1-GE3 used for in technical solutions?
- The SI7489DP-T1-GE3 is a dual N-channel MOSFET designed for use in power management and load switching applications.
What are the key features of the SI7489DP-T1-GE3?
- The key features include low on-resistance, high current handling capability, and a compact package design for space-constrained applications.
What is the maximum voltage and current rating for the SI7489DP-T1-GE3?
- The SI7489DP-T1-GE3 has a maximum voltage rating of [insert voltage] and a maximum current rating of [insert current].
Can the SI7489DP-T1-GE3 be used in automotive applications?
- Yes, the SI7489DP-T1-GE3 is suitable for automotive applications due to its robust design and performance characteristics.
What are the thermal considerations when using the SI7489DP-T1-GE3 in a technical solution?
- Proper heat sinking and thermal management should be considered to ensure the MOSFET operates within its specified temperature range.
Does the SI7489DP-T1-GE3 require any external components for proper operation?
- The SI7489DP-T1-GE3 may require external components such as gate drivers and protection circuitry depending on the specific application requirements.
What are the typical applications for the SI7489DP-T1-GE3 in technical solutions?
- Typical applications include power supplies, motor control, battery management, and other power switching functions.
Is the SI7489DP-T1-GE3 suitable for high-frequency switching applications?
- The SI7489DP-T1-GE3 can be used in high-frequency switching applications, but the specific operating conditions should be carefully evaluated.
What are the recommended PCB layout guidelines for using the SI7489DP-T1-GE3?
- Proper attention to layout, including minimizing parasitic inductance and ensuring good thermal dissipation, is important for optimal performance.
Where can I find detailed technical specifications and application notes for the SI7489DP-T1-GE3?
- Detailed technical specifications and application notes can be found in the product datasheet and related documentation provided by the manufacturer.