SIHA2N80E-GE3

Introduction

The SIHA2N80E-GE3 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHA2N80E-GE3.

Basic Information Overview

• Category: Electronic Components
• Use: Power MOSFET for electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220
• Essence: Power management in electronic devices
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

• Voltage Rating: 800V
• Current Rating: 2A
• On-Resistance: 4.5Ω
• Gate Threshold Voltage: 2.5V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-220

Detailed Pin Configuration

The SIHA2N80E-GE3 has a standard TO-220 package with three pins: 1. Gate (G): Input for controlling the MOSFET 2. Drain (D): Output terminal for the high-voltage connection 3. Source (S): Ground terminal

Functional Features

• High Voltage Capability: Suitable for high-power applications
• Low On-Resistance: Minimizes power loss and heat generation
• Fast Switching Speed: Enables efficient operation in switching circuits

Advantages and Disadvantages

Advantages

• Efficient power management
• Suitable for high-voltage applications
• Low power dissipation

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SIHA2N80E-GE3 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for effective power regulation in electronic circuits.

Detailed Application Field Plans

The SIHA2N80E-GE3 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - LED lighting drivers - Audio amplifiers - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the SIHA2N80E-GE3 include: - IRF840: Similar voltage and current ratings - FQP27P06: Complementary P-channel MOSFET - STP16NF06: Lower voltage rating but higher current capability

In conclusion, the SIHA2N80E-GE3 is a versatile power MOSFET with a wide range of applications in electronic circuits. Its high voltage capability, low on-resistance, and fast switching speed make it an essential component in various power management systems.

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