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SIHB12N60E-GE3

SIHB12N60E-GE3

Product Category

The SIHB12N60E-GE3 belongs to the category of power MOSFETs.

Basic Information Overview

  • Use: The SIHB12N60E-GE3 is used as a power semiconductor device for high-frequency switching and amplification in various electronic circuits.
  • Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications.
  • Package: The SIHB12N60E-GE3 is typically available in a TO-220AB package.
  • Essence: Its essence lies in providing efficient power management and control in electronic systems.
  • Packaging/Quantity: It is commonly packaged in reels containing a specific quantity based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 12A
  • RDS(ON): 0.35Ω
  • Gate Charge: 20nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB12N60E-GE3 features a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High Voltage Capability
  • Low On-State Resistance
  • Fast Switching Speed
  • Low Gate Charge

Advantages

  • Enhanced Power Efficiency
  • Reduced Heat Dissipation
  • Improved System Reliability
  • Compact Design Integration

Disadvantages

  • Sensitivity to Overvoltage Conditions
  • Potential for Gate-Drive Complexity

Working Principles

The SIHB12N60E-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHB12N60E-GE3 finds extensive application in: - Switched-Mode Power Supplies - Motor Control Systems - Inverters and Converters - Lighting Ballasts - Audio Amplifiers

Detailed and Complete Alternative Models

  1. SIHB12N60E
    • Similar specifications and characteristics
  2. IRFB7434PbF
    • Comparable performance in power electronics applications
  3. STW12NK60Z
    • Alternative option with equivalent power handling capabilities

This comprehensive range of alternative models ensures flexibility in design and procurement decisions.


This content provides a detailed overview of the SIHB12N60E-GE3, covering its category, basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SIHB12N60E-GE3 v technických řešeních

  1. What is the maximum voltage rating of SIHB12N60E-GE3?

    • The maximum voltage rating of SIHB12N60E-GE3 is 600V.
  2. What is the maximum continuous drain current of SIHB12N60E-GE3?

    • The maximum continuous drain current of SIHB12N60E-GE3 is 12A.
  3. What is the on-state resistance of SIHB12N60E-GE3?

    • The on-state resistance of SIHB12N60E-GE3 is typically 0.45 ohms.
  4. What type of package does SIHB12N60E-GE3 come in?

    • SIHB12N60E-GE3 comes in a TO-220 full-pack package.
  5. What are the typical applications for SIHB12N60E-GE3?

    • SIHB12N60E-GE3 is commonly used in power supplies, motor drives, and lighting applications.
  6. What is the operating temperature range of SIHB12N60E-GE3?

    • The operating temperature range of SIHB12N60E-GE3 is -55°C to 150°C.
  7. Does SIHB12N60E-GE3 have built-in protection features?

    • Yes, SIHB12N60E-GE3 has built-in overcurrent and thermal protection.
  8. Can SIHB12N60E-GE3 be used in high-frequency switching applications?

    • Yes, SIHB12N60E-GE3 is suitable for high-frequency switching due to its low gate charge and intrinsic diode.
  9. What is the gate threshold voltage of SIHB12N60E-GE3?

    • The gate threshold voltage of SIHB12N60E-GE3 is typically 4V.
  10. Is SIHB12N60E-GE3 RoHS compliant?

    • Yes, SIHB12N60E-GE3 is RoHS compliant, making it suitable for environmentally friendly designs.