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SIHB22N60E-E3
Product Overview
Category
The SIHB22N60E-E3 belongs to the category of power semiconductor devices.
Use
It is used for high-voltage and high-current applications in various electronic circuits and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Robust and reliable performance
Package
The SIHB22N60E-E3 is typically available in a TO-220AB package.
Essence
This product is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The SIHB22N60E-E3 is commonly packaged in reels or tubes, with varying quantities based on customer requirements.
Specifications
- Voltage Rating: 600V
- Current Rating: 22A
- On-State Resistance: <0.2Ω
- Switching Speed: <100ns
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHB22N60E-E3 features a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source
Functional Features
- High voltage blocking capability
- Low conduction losses
- Fast and efficient switching
- Suitable for high-power applications
Advantages
- Excellent power handling capacity
- Low on-state resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Reliable performance under high-voltage conditions
Disadvantages
- Higher cost compared to lower-rated devices
- Requires proper thermal management due to high power dissipation
Working Principles
The SIHB22N60E-E3 operates based on the principles of field-effect transistor (FET) technology, utilizing its ability to control current flow through the manipulation of electric fields within the device structure.
Detailed Application Field Plans
The SIHB22N60E-E3 is widely used in the following application fields: - Switched-mode power supplies - Motor control systems - Inverters and converters - Industrial automation equipment - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the SIHB22N60E-E3 include: - SIHB20N60E-E3 - SIHB25N60E-E3 - SIHB30N60E-E3 - SIHB18N60E-E3
In conclusion, the SIHB22N60E-E3 is a high-performance power semiconductor device with excellent voltage and current handling capabilities, making it suitable for a wide range of high-power electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SIHB22N60E-E3 v technických řešeních
What is the maximum voltage rating of SIHB22N60E-E3?
- The maximum voltage rating of SIHB22N60E-E3 is 600V.
What is the maximum continuous drain current for SIHB22N60E-E3?
- The maximum continuous drain current for SIHB22N60E-E3 is 22A.
What type of package does SIHB22N60E-E3 come in?
- SIHB22N60E-E3 comes in a TO-220AB package.
What is the on-state resistance (RDS(on)) of SIHB22N60E-E3?
- The on-state resistance of SIHB22N60E-E3 is typically 0.19 ohms.
Is SIHB22N60E-E3 suitable for high-frequency switching applications?
- Yes, SIHB22N60E-E3 is suitable for high-frequency switching applications.
What is the operating temperature range for SIHB22N60E-E3?
- The operating temperature range for SIHB22N60E-E3 is -55°C to 150°C.
Does SIHB22N60E-E3 have built-in protection features?
- Yes, SIHB22N60E-E3 has built-in overcurrent and thermal protection features.
Can SIHB22N60E-E3 be used in motor control applications?
- Yes, SIHB22N60E-E3 can be used in motor control applications.
What gate-source voltage is required to fully enhance SIHB22N60E-E3?
- A gate-source voltage of 10V is required to fully enhance SIHB22N60E-E3.
Is SIHB22N60E-E3 RoHS compliant?
- Yes, SIHB22N60E-E3 is RoHS compliant.