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SIHB23N60E-GE3
Product Overview
Category
The SIHB23N60E-GE3 belongs to the category of power semiconductor devices.
Use
It is used for power conversion and control in various electronic applications.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Robust and reliable performance
Package
The SIHB23N60E-GE3 is typically available in a TO-220AB package.
Essence
This product is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 600V
- Current Rating: 23A
- On-State Resistance: <0.25Ω
- Gate Threshold Voltage: 3V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHB23N60E-GE3 features a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source
Functional Features
- High voltage blocking capability
- Low conduction losses
- Fast and efficient switching
- Enhanced thermal performance
Advantages
- Suitable for high-power applications
- Low power dissipation
- Reliable under high-stress conditions
- Compatible with various driving circuits
Disadvantages
- Higher cost compared to standard MOSFETs
- Larger physical footprint
- Requires careful thermal management in high-power designs
Working Principles
The SIHB23N60E-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
This device is widely used in: - Switch-mode power supplies - Motor control systems - Renewable energy inverters - Industrial automation equipment - Electric vehicle powertrains
Detailed and Complete Alternative Models
- IRFB23N60C3
- STW23N60M2
- FDPF23N50T
In conclusion, the SIHB23N60E-GE3 is a high-performance power semiconductor device that offers efficient power management and control capabilities for a wide range of electronic applications. Its robust characteristics and functional features make it a preferred choice for demanding power electronics designs.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SIHB23N60E-GE3 v technických řešeních
What is the maximum voltage rating of SIHB23N60E-GE3?
- The maximum voltage rating of SIHB23N60E-GE3 is 600V.
What is the continuous drain current of SIHB23N60E-GE3?
- The continuous drain current of SIHB23N60E-GE3 is 23A.
What is the on-state resistance of SIHB23N60E-GE3?
- The on-state resistance of SIHB23N60E-GE3 is typically 0.19 ohms.
Can SIHB23N60E-GE3 be used in high-frequency applications?
- Yes, SIHB23N60E-GE3 is suitable for high-frequency applications due to its fast switching characteristics.
What type of package does SIHB23N60E-GE3 come in?
- SIHB23N60E-GE3 is available in a TO-220 full-pack package.
Is SIHB23N60E-GE3 suitable for use in motor control applications?
- Yes, SIHB23N60E-GE3 is commonly used in motor control applications due to its high current and voltage ratings.
Does SIHB23N60E-GE3 require a heatsink for proper operation?
- It is recommended to use a heatsink with SIHB23N60E-GE3 to ensure proper thermal management, especially in high-power applications.
What is the maximum junction temperature of SIHB23N60E-GE3?
- The maximum junction temperature of SIHB23N60E-GE3 is 150°C.
Can SIHB23N60E-GE3 be used in automotive applications?
- Yes, SIHB23N60E-GE3 is suitable for automotive applications such as motor control and power distribution.
Are there any specific ESD precautions to consider when handling SIHB23N60E-GE3?
- It is important to follow standard ESD precautions when handling SIHB23N60E-GE3 to prevent damage to the device during assembly and installation.