SIHG14N50D-GE3

Introduction

The SIHG14N50D-GE3 belongs to the category of power MOSFETs and is widely used in various electronic applications. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHG14N50D-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHG14N50D-GE3 is used as a switching device in power supplies, motor control, and other high voltage applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: TO-220AB
• Essence: The essence of SIHG14N50D-GE3 lies in its ability to handle high voltages and currents with minimal power loss.
• Packaging/Quantity: Typically packaged in reels or tubes containing multiple units.

Specifications

• Voltage Rating: 500V
• Current Rating: 14A
• On-State Resistance: 0.52Ω
• Gate Charge: 24nC
• Operating Temperature: -55°C to 150°C
• Mounting Type: Through Hole

Detailed Pin Configuration

The SIHG14N50D-GE3 follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High Voltage Capability: The MOSFET can withstand high voltages, making it suitable for high-power applications.
• Low On-State Resistance: This feature reduces power dissipation and improves efficiency.
• Fast Switching Speed: Enables rapid switching in power electronics applications.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-state resistance
• Fast switching speed
• Enhanced power efficiency

Disadvantages

• Sensitivity to static electricity
• Gate drive considerations required for optimal performance

Working Principles

The SIHG14N50D-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high currents in power circuits.

Detailed Application Field Plans

The SIHG14N50D-GE3 finds extensive use in the following applications: - Switched Mode Power Supplies (SMPS) - Motor Control Systems - Inverters and Converters - Electronic Ballasts - Industrial Power Systems

Detailed and Complete Alternative Models

• SIHG14N50C-E3: Similar specifications with slight variations in characteristics
• SIHG14N60E-E3: Higher voltage rating with comparable current handling capabilities
• SIHG14N40D-E3: Lower voltage rating with similar current and resistance characteristics

In conclusion, the SIHG14N50D-GE3 power MOSFET offers high voltage capability, low on-state resistance, and fast switching speed, making it a versatile component for various power electronics applications.

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