SIHG16N50C-E3

Product Overview

Category

The SIHG16N50C-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHG16N50C-E3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 500V
• Continuous Drain Current (ID): 16A
• On-Resistance (RDS(on)): 0.52Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 28nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHG16N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables rapid control in switching applications.

Advantages

• Suitable for high-voltage applications
• Low conduction losses
• Fast switching speed

Disadvantages

• Higher gate capacitance compared to some alternative models
• May require careful consideration of drive circuitry due to high gate-source voltage

Working Principles

The SIHG16N50C-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

• Power supply units
• Motor control systems
• Inverters and converters
• Switching power supplies

Detailed and Complete Alternative Models

Some alternative models to the SIHG16N50C-E3 include: - IRF840 - STP16NF06L - FQP16N25

In conclusion, the SIHG16N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications. While it has advantages such as low conduction losses and suitability for high-voltage applications, it also has considerations such as higher gate capacitance and drive circuitry requirements. Understanding its specifications, pin configuration, functional features, and alternative models provides a comprehensive view of its capabilities and potential applications.