SIHW47N65E-GE3

Product Category

The SIHW47N65E-GE3 belongs to the category of power MOSFETs.

Basic Information Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, high switching speed
• Package: TO-247
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in tubes or trays, quantity varies by manufacturer

Specifications

• Voltage Rating: 650V
• Current Rating: 47A
• On-Resistance: 0.065 ohms
• Gate Charge: 47nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHW47N65E-GE3 typically has a standard pin configuration for a TO-247 package, with three pins: gate, drain, and source.

Functional Features

• High voltage capability
• Low on-resistance for efficient power transfer
• Fast switching speed for improved performance
• Enhanced thermal performance for reliability

Advantages

• Suitable for high-power applications
• Low conduction losses
• Reduced heat generation
• Enhanced system efficiency

Disadvantages

• Higher cost compared to lower voltage MOSFETs
• Requires careful consideration of drive circuitry due to high gate charge

Working Principles

The SIHW47N65E-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans

• Industrial motor drives
• Power supplies
• Renewable energy systems
• Electric vehicles
• Welding equipment

Detailed and Complete Alternative Models

• Infineon IPP047N06N3 G
• STMicroelectronics STW47N65M5
• ON Semiconductor NTP47N06L

This comprehensive entry provides a detailed overview of the SIHW47N65E-GE3 power MOSFET, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.