Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
SIR414DP-T1-GE3

SIR414DP-T1-GE3

Introduction

The SIR414DP-T1-GE3 is a power MOSFET belonging to the semiconductor category. It is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor, Power MOSFET
  • Use: Power switching applications, voltage regulation
  • Characteristics: High power handling capability, low on-resistance, fast switching speed
  • Package: DPAK (TO-252)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

  • Voltage Rating: 40V
  • Current Rating: 195A
  • On-Resistance: 1.4mΩ
  • Package Type: DPAK (TO-252)
  • Operating Temperature Range: -55°C to 175°C
  • Gate Charge: 45nC
  • Mounting Type: Surface Mount

Detailed Pin Configuration

The SIR414DP-T1-GE3 follows the standard pin configuration for DPAK packages: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low On-Resistance: Enables efficient power transfer and minimizes power loss.
  • Fast Switching Speed: Facilitates rapid switching between on and off states, crucial for high-frequency applications.
  • High Current Handling: Capable of handling high currents, making it suitable for power switching applications.

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Low on-resistance
  • Fast switching speed
  • Compact DPAK package
  • Wide operating temperature range

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited voltage rating compared to higher-voltage MOSFETs

Working Principles

The SIR414DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the MOSFET switches from a high-resistance state to a low-resistance state, allowing current to flow through the device.

Detailed Application Field Plans

The SIR414DP-T1-GE3 finds extensive use in various applications, including: - DC-DC converters - Motor control systems - Power supplies - Battery management systems - Voltage regulation circuits

Detailed and Complete Alternative Models

Some alternative models to the SIR414DP-T1-GE3 include: - AON7754 - SI7850DP-T1-GE3 - FDD6637

In conclusion, the SIR414DP-T1-GE3 power MOSFET offers high performance and reliability in power switching applications, making it a popular choice among electronic designers and engineers.

[Word count: 387]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SIR414DP-T1-GE3 v technických řešeních

  1. What is the maximum voltage rating for SIR414DP-T1-GE3?

    • The maximum voltage rating for SIR414DP-T1-GE3 is 40V.
  2. What is the typical on-state resistance of SIR414DP-T1-GE3?

    • The typical on-state resistance of SIR414DP-T1-GE3 is 4.5 mΩ.
  3. Can SIR414DP-T1-GE3 be used in automotive applications?

    • Yes, SIR414DP-T1-GE3 is suitable for use in automotive applications.
  4. What is the maximum continuous drain current for SIR414DP-T1-GE3?

    • The maximum continuous drain current for SIR414DP-T1-GE3 is 120A.
  5. Does SIR414DP-T1-GE3 have overcurrent protection?

    • Yes, SIR414DP-T1-GE3 features overcurrent protection.
  6. Is SIR414DP-T1-GE3 RoHS compliant?

    • Yes, SIR414DP-T1-GE3 is RoHS compliant.
  7. What is the operating temperature range for SIR414DP-T1-GE3?

    • The operating temperature range for SIR414DP-T1-GE3 is -55°C to 175°C.
  8. Can SIR414DP-T1-GE3 be used in power management applications?

    • Yes, SIR414DP-T1-GE3 is suitable for power management applications.
  9. What is the gate threshold voltage for SIR414DP-T1-GE3?

    • The gate threshold voltage for SIR414DP-T1-GE3 is typically 2.5V.
  10. Does SIR414DP-T1-GE3 have a low leakage current?

    • Yes, SIR414DP-T1-GE3 has a low leakage current, making it suitable for high-efficiency applications.