SIR624DP-T1-GE3

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High efficiency, low on-resistance
Package: DPAK (TO-252)
Essence: Advanced power management
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 10A, 10V
• Input Capacitance (Ciss) @ Vds: 2900pF @ 30V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low gate charge
• Fast switching speed
• Avalanche energy specified
• Improved dv/dt capability

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Enhanced power management

Disadvantages: - Sensitivity to voltage spikes - Limited maximum voltage rating

Working Principles

The SIR624DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing a gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Switching Power Supplies: Utilized in high-frequency power converters for efficient power management.
2. Motor Control: Enables precise control of motor speed and direction in various applications.
3. LED Lighting: Facilitates efficient power delivery for LED lighting systems.

Detailed and Complete Alternative Models

1. SIR621DP-T1-GE3: Similar characteristics with a lower continuous drain current.
2. SIR628DP-T1-GE3: Higher continuous drain current and lower on-resistance compared to SIR624DP-T1-GE3.

This comprehensive entry provides an in-depth understanding of the SIR624DP-T1-GE3, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.