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SIRA18DP-T1-GE3
Product Overview
Category
The SIRA18DP-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirement
Package
The SIRA18DP-T1-GE3 is typically available in a compact and efficient package suitable for surface mount technology (SMT) assembly.
Essence
This MOSFET offers high efficiency and reliability in power management systems.
Packaging/Quantity
It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage: [specification]
- Continuous Drain Current: [specification]
- On-State Resistance: [specification]
- Gate-Source Voltage: [specification]
- Power Dissipation: [specification]
Detailed Pin Configuration
The SIRA18DP-T1-GE3 features a standard pin configuration with clearly defined drain, source, and gate terminals. The pinout is designed for easy integration into circuit layouts.
Functional Features
- Low conduction losses
- Enhanced thermal performance
- Robust avalanche energy handling capability
- ESD protection
Advantages
- High efficiency in power conversion
- Reduced heat dissipation
- Improved system reliability
- Compatibility with various driving circuits
Disadvantages
- Sensitivity to overvoltage conditions
- Limited current-handling capacity compared to some alternative models
Working Principles
The SIRA18DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SIRA18DP-T1-GE3 is well-suited for use in: - Switching power supplies - Motor control systems - LED lighting applications - Battery management circuits
Detailed and Complete Alternative Models
- SIRA12DP-T1-GE3
- SIRA24DP-T1-GE3
- SIRA18EP-T1-GE3
- SIRA18FP-T1-GE3
In conclusion, the SIRA18DP-T1-GE3 power MOSFET offers high-performance characteristics and is widely applicable in diverse power management scenarios. Its efficient design and functional features make it a valuable component in modern electronic systems.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SIRA18DP-T1-GE3 v technických řešeních
What is the maximum power dissipation of SIRA18DP-T1-GE3?
- The maximum power dissipation of SIRA18DP-T1-GE3 is 1.5W.
What is the operating temperature range for SIRA18DP-T1-GE3?
- The operating temperature range for SIRA18DP-T1-GE3 is -55°C to 150°C.
What is the typical forward voltage drop of SIRA18DP-T1-GE3?
- The typical forward voltage drop of SIRA18DP-T1-GE3 is 0.75V at 1A.
What is the reverse breakdown voltage of SIRA18DP-T1-GE3?
- The reverse breakdown voltage of SIRA18DP-T1-GE3 is 20V.
What are the package dimensions of SIRA18DP-T1-GE3?
- SIRA18DP-T1-GE3 comes in a DPAK (TO-252) package with dimensions of 6.6mm x 9.15mm x 4.7mm.
What is the maximum continuous forward current for SIRA18DP-T1-GE3?
- The maximum continuous forward current for SIRA18DP-T1-GE3 is 1A.
Does SIRA18DP-T1-GE3 have any special handling requirements?
- SIRA18DP-T1-GE3 should be handled using standard ESD precautions to avoid damage.
Is SIRA18DP-T1-GE3 suitable for automotive applications?
- Yes, SIRA18DP-T1-GE3 is AEC-Q101 qualified and suitable for automotive applications.
What are the typical applications for SIRA18DP-T1-GE3?
- SIRA18DP-T1-GE3 is commonly used in DC-DC converters, motor control, and reverse battery protection circuits.
What are the key differences between SIRA18DP-T1-GE3 and other similar diodes?
- SIRA18DP-T1-GE3 offers low forward voltage drop, high surge capability, and AEC-Q101 qualification, making it suitable for demanding automotive and industrial applications.