SISA34DN-T1-GE3

Introduction

The SISA34DN-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

Category: Power MOSFET
Use: Electronic circuitry, power management
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Efficient power control
Packaging/Quantity: Typically packaged in reels of 250 units

Specifications

Voltage Rating: 100V
Current Rating: 30A
On-Resistance: 9.5mΩ
Gate Charge: 20nC
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SISA34DN-T1-GE3 follows the standard pin configuration for a TO-220AB package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

High Voltage Capability: Allows for use in high-power applications.
Low On-Resistance: Minimizes power loss and heat generation.
Fast Switching Speed: Enables efficient power control and regulation.

Advantages and Disadvantages

Advantages

Efficient power management
Suitable for high-power applications
Low power dissipation

Disadvantages

Higher cost compared to standard MOSFETs
Requires careful thermal management in high-power applications

Working Principles

The SISA34DN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SISA34DN-T1-GE3 finds extensive use in the following application fields: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

SISA36DN-T1-GE3
SISA38DN-T1-GE3
SISA40DN-T1-GE3

In conclusion, the SISA34DN-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among design engineers and electronic enthusiasts.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SISA34DN-T1-GE3 v technických řešeních

What is SISA34DN-T1-GE3?
- SISA34DN-T1-GE3 is a high-speed, low-side MOSFET driver designed for use in various technical solutions requiring efficient switching of power MOSFETs.
What is the maximum operating frequency of SISA34DN-T1-GE3?
- The maximum operating frequency of SISA34DN-T1-GE3 is typically around 2MHz, making it suitable for high-frequency applications.
What is the input voltage range for SISA34DN-T1-GE3?
- The input voltage range for SISA34DN-T1-GE3 is typically between 4.5V and 18V, allowing compatibility with a wide range of control circuits.
What is the output current capability of SISA34DN-T1-GE3?
- SISA34DN-T1-GE3 can drive up to 4A of peak current, making it suitable for driving medium to high-power MOSFETs.
Is SISA34DN-T1-GE3 suitable for automotive applications?
- Yes, SISA34DN-T1-GE3 is designed to meet the stringent requirements of automotive applications, including AEC-Q100 qualification.
Does SISA34DN-T1-GE3 have built-in protection features?
- Yes, SISA34DN-T1-GE3 includes features such as undervoltage lockout (UVLO) and thermal shutdown to protect the device and the connected MOSFETs.
What is the typical propagation delay of SISA34DN-T1-GE3?
- The typical propagation delay of SISA34DN-T1-GE3 is around 15ns, ensuring fast and precise control of the MOSFET switching.
Can SISA34DN-T1-GE3 be used in synchronous rectification applications?
- Yes, SISA34DN-T1-GE3 is suitable for synchronous rectification due to its high-speed and low-side driving capabilities.
What is the operating temperature range of SISA34DN-T1-GE3?
- SISA34DN-T1-GE3 is designed to operate within a temperature range of -40°C to 125°C, making it suitable for harsh environments.
Is SISA34DN-T1-GE3 available in different package options?
- Yes, SISA34DN-T1-GE3 is available in various package options, including SOIC-8 and DFN-8, providing flexibility for different PCB layouts and space constraints.