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SQJ422EP-T1_GE3
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SQJ422EP-T1_GE3

Product Overview

Belongs to: Semiconductor Devices
Category: Power MOSFET
Use: Power switching applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-252-3 (DPAK)
Essence: Efficient power management
Packaging/Quantity: Tape and Reel, 2500 units

Specifications

  • Voltage Rating: 150V
  • Current Rating: 30A
  • On-Resistance: 25mΩ
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain

Functional Features

  • Low on-resistance for high efficiency
  • Fast switching speed for improved performance
  • Enhanced power management capabilities

Advantages

  • High voltage rating suitable for various applications
  • Low on-resistance minimizes power loss
  • Fast switching speed enhances overall performance

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to static electricity

Working Principles

The SQJ422EP-T1_GE3 operates by controlling the flow of current between the source and drain terminals using the gate voltage. When a sufficient gate voltage is applied, the MOSFET allows current to flow, and when the gate voltage is removed, the current flow is interrupted.

Detailed Application Field Plans

  1. Power Supplies: Utilized in high-voltage power supply units for efficient power management.
  2. Motor Control: Integrated into motor control circuits for improved performance and energy efficiency.
  3. Inverters: Used in inverters for renewable energy systems to enhance power conversion efficiency.

Detailed and Complete Alternative Models

  1. SQJ421EP-T1_GE3: Similar specifications with a lower current rating.
  2. SQJ423EP-T1_GE3: Higher current rating with comparable voltage and on-resistance characteristics.

This comprehensive entry provides detailed information about the SQJ422EP-T1_GE3 Power MOSFET, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, offering valuable insights for engineers and researchers in the semiconductor industry.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SQJ422EP-T1_GE3 v technických řešeních

  1. What is the operating temperature range of SQJ422EP-T1_GE3?

    • The operating temperature range of SQJ422EP-T1_GE3 is typically -55°C to 150°C.

  2. What is the maximum drain-source voltage rating of SQJ422EP-T1_GE3?

    • The maximum drain-source voltage rating of SQJ422EP-T1_GE3 is 40V.

  3. Can SQJ422EP-T1_GE3 be used in automotive applications?

    • Yes, SQJ422EP-T1_GE3 is suitable for automotive applications due to its high-temperature performance and reliability.

  4. What is the typical on-resistance of SQJ422EP-T1_GE3?

    • The typical on-resistance of SQJ422EP-T1_GE3 is 6.5mΩ at 10V gate-source voltage.

  5. Does SQJ422EP-T1_GE3 have built-in ESD protection?

    • Yes, SQJ422EP-T1_GE3 features built-in ESD protection, making it suitable for robust applications.

  6. What is the recommended gate-source voltage for driving SQJ422EP-T1_GE3?

    • The recommended gate-source voltage for driving SQJ422EP-T1_GE3 is typically 10V.

  7. Is SQJ422EP-T1_GE3 RoHS compliant?

    • Yes, SQJ422EP-T1_GE3 is RoHS compliant, meeting environmental standards.

  8. What are the typical applications for SQJ422EP-T1_GE3?

    • Typical applications for SQJ422EP-T1_GE3 include power management, motor control, and battery protection in various electronic devices.

  9. Does SQJ422EP-T1_GE3 support high-frequency switching?

    • Yes, SQJ422EP-T1_GE3 is designed to support high-frequency switching applications.

  10. What package type is SQJ422EP-T1_GE3 available in?

    • SQJ422EP-T1_GE3 is available in a PowerPAK® SO-8 package, offering a compact and efficient form factor for integration into technical solutions.