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SQJ858AEP-T1_GE3
Product Overview
Category
The SQJ858AEP-T1_GE3 belongs to the category of power MOSFETs.
Use
It is used in various electronic circuits and systems for power management and control.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SQJ858AEP-T1_GE3 comes in a compact and efficient package suitable for surface mount applications.
Essence
This MOSFET is essential for efficient power conversion and management in electronic devices and systems.
Packaging/Quantity
The SQJ858AEP-T1_GE3 is typically packaged in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 40A
- On-Resistance (RDS(on)): 8mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 35nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The detailed pin configuration of the SQJ858AEP-T1_GE3 is as follows: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
Functional Features
- High voltage capability allows for use in a wide range of applications
- Low on-resistance minimizes power loss and improves efficiency
- Fast switching speed enables rapid response in power control systems
Advantages and Disadvantages
Advantages
- Efficient power management
- Suitable for high voltage applications
- Fast switching speed
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The SQJ858AEP-T1_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SQJ858AEP-T1_GE3 is widely used in the following application fields: - Switching power supplies - Motor control systems - LED lighting - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the SQJ858AEP-T1_GE3 include: - IRF3205 - FDP8878 - AUIRF3710
In conclusion, the SQJ858AEP-T1_GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for efficient power management in various electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SQJ858AEP-T1_GE3 v technických řešeních
What is the operating voltage range of SQJ858AEP-T1_GE3?
- The operating voltage range of SQJ858AEP-T1_GE3 is typically from 0.5V to 20V.
What is the maximum continuous drain current of SQJ858AEP-T1_GE3?
- The maximum continuous drain current of SQJ858AEP-T1_GE3 is typically 8A.
What is the typical on-resistance of SQJ858AEP-T1_GE3?
- The typical on-resistance of SQJ858AEP-T1_GE3 is around 4.5mΩ.
Can SQJ858AEP-T1_GE3 be used in automotive applications?
- Yes, SQJ858AEP-T1_GE3 is suitable for automotive applications.
What is the recommended operating temperature range for SQJ858AEP-T1_GE3?
- The recommended operating temperature range for SQJ858AEP-T1_GE3 is -55°C to 175°C.
Does SQJ858AEP-T1_GE3 have built-in protection features?
- Yes, SQJ858AEP-T1_GE3 includes built-in overcurrent and thermal protection.
What type of package does SQJ858AEP-T1_GE3 come in?
- SQJ858AEP-T1_GE3 is available in a PowerPAK® SO-8 package.
Is SQJ858AEP-T1_GE3 suitable for use in power management applications?
- Yes, SQJ858AEP-T1_GE3 is well-suited for power management applications.
What are the typical applications for SQJ858AEP-T1_GE3?
- Typical applications for SQJ858AEP-T1_GE3 include load switching, power distribution, and battery protection.
Is SQJ858AEP-T1_GE3 RoHS compliant?
- Yes, SQJ858AEP-T1_GE3 is RoHS compliant, making it suitable for environmentally conscious designs.