SQJB90EP-T1_GE3

Product Overview

Category: Semiconductor
Use: Power transistor for electronic devices
Characteristics: High power handling, low on-resistance, fast switching speed
Package: TO-263AB
Essence: Efficient power management
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 90A
• On-Resistance: 4.5mΩ
• Gate Charge: 35nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• High power handling capability
• Low on-resistance for reduced power loss
• Fast switching speed for improved efficiency
• Enhanced thermal performance

Advantages and Disadvantages

Advantages: - High power handling - Low on-resistance - Fast switching speed - Reliable thermal performance

Disadvantages: - Sensitive to voltage spikes - Requires careful ESD handling

Working Principles

The SQJB90EP-T1_GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

1. Power Supplies: Utilized in high-power switch-mode power supplies for efficient energy conversion.
2. Motor Control: Integrated into motor drive circuits for controlling high-current motors.
3. Inverters: Employed in inverters for renewable energy systems to manage power flow.

Detailed and Complete Alternative Models

1. SQJB80EP-T1_GE3: Similar specifications with a lower current rating.
2. SQJB100EP-T1_GE3: Higher current rating with comparable characteristics.

This comprehensive entry provides an in-depth understanding of the SQJB90EP-T1_GE3 power transistor, including its specifications, functional features, advantages, and application field plans.

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