Vishay Siliconix
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
SQJQ466E-T1_GE3
Zobrazit detail DataSheets

SQJQ466E-T1_GE3

Product Overview

  • Category: Semiconductor
  • Use: Power MOSFET
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: TO-263-3
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 30A
  • On-Resistance: 8.5mΩ
  • Gate Charge: 18nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching for high efficiency
  • Low on-resistance for reduced power loss
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

  • Advantages:
    • High voltage rating
    • Low on-resistance
    • Fast switching speed
  • Disadvantages:
    • Sensitive to overvoltage conditions
    • Higher cost compared to standard MOSFETs

Working Principles

The SQJQ466E-T1_GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • Alternative Model 1: SQJQ477E-T1_GE3
  • Alternative Model 2: SQJQ488E-T1_GE3
  • Alternative Model 3: SQJQ499E-T1_GE3

Note: The above information provides a comprehensive overview of the SQJQ466E-T1_GE3 power MOSFET, covering its specifications, features, application fields, and alternative models.

[Word Count: 287]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SQJQ466E-T1_GE3 v technických řešeních

  1. What is SQJQ466E-T1_GE3?

    • SQJQ466E-T1_GE3 is a high-speed, low-loss, and low-capacitance diode array designed for ESD protection in high-speed data lines.

  2. What are the key features of SQJQ466E-T1_GE3?

    • The key features include ultra-low capacitance, low clamping voltage, high surge current capability, and compatibility with high-speed data interfaces.

  3. In what applications can SQJQ466E-T1_GE3 be used?

    • SQJQ466E-T1_GE3 is commonly used in applications such as USB 3.0/3.1, HDMI, DisplayPort, Thunderbolt, and other high-speed data interfaces.

  4. What is the typical clamping voltage of SQJQ466E-T1_GE3?

    • The typical clamping voltage of SQJQ466E-T1_GE3 is very low, ensuring effective protection of sensitive components in high-speed data lines.

  5. How does SQJQ466E-T1_GE3 provide ESD protection?

    • SQJQ466E-T1_GE3 provides ESD protection by diverting transient voltage away from sensitive circuitry, thereby safeguarding against damage from ESD events.

  6. What is the operating temperature range of SQJQ466E-T1_GE3?

    • SQJQ466E-T1_GE3 typically operates within a wide temperature range, making it suitable for various environmental conditions.

  7. Can SQJQ466E-T1_GE3 be used in automotive applications?

    • Yes, SQJQ466E-T1_GE3 is often utilized in automotive electronics for ESD protection in high-speed communication interfaces.

  8. Does SQJQ466E-T1_GE3 comply with industry standards?

    • Yes, SQJQ466E-T1_GE3 complies with relevant industry standards for ESD protection and high-speed data interface requirements.

  9. What package options are available for SQJQ466E-T1_GE3?

    • SQJQ466E-T1_GE3 is available in compact and space-saving package options, catering to diverse design requirements.

  10. Are there any application notes or design guidelines available for using SQJQ466E-T1_GE3?

    • Yes, comprehensive application notes and design guidelines are provided by the manufacturer to assist engineers in effectively integrating SQJQ466E-T1_GE3 into their technical solutions.