SQM30010EL_GE3

Product Overview

Category: Semiconductor
Use: Power management
Characteristics: High efficiency, low power consumption
Package: TO-263-7L
Essence: MOSFET
Packaging/Quantity: Tape & Reel / 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Min): 100V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 60A, 10V
• Input Capacitance (Ciss) @ Vds: 6800pF @ 50V
• Power Dissipation (Max): 310W

Detailed Pin Configuration

1. Gate
2. Source
3. Drain
4. N/C
5. N/C
6. Source
7. Gate

Functional Features

• Low on-resistance
• Fast switching speed
• High power density

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Compact package size

Disadvantages: - Higher cost compared to traditional MOSFETs - Sensitive to voltage spikes

Working Principles

The SQM30010EL_GE3 is a MOSFET designed for power management applications. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

The SQM30010EL_GE3 is suitable for various power management applications such as: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

1. SQM30010EL_GQ3: Similar specifications with different packaging
2. SQM30010EL_GF3: Enhanced thermal performance variant
3. SQM30010EL_GD3: Lower Rds On variant for higher efficiency

This comprehensive semiconductor device offers high efficiency and low power consumption, making it ideal for various power management applications. Its compact package and high power density make it a preferred choice for modern electronic designs.

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