W25Q40BWSNIG

Product Overview

Category

The W25Q40BWSNIG belongs to the category of Serial Flash Memory.

Use

It is primarily used for storing data in electronic devices such as computers, smartphones, and other consumer electronics.

Characteristics

• Non-volatile memory: The W25Q40BWSNIG retains stored data even when power is removed.
• High storage capacity: It has a capacity of 4 megabits (512 kilobytes).
• Serial interface: The device communicates using a serial peripheral interface (SPI).
• Fast read and write speeds: It offers high-speed data transfer for efficient operation.
• Low power consumption: The W25Q40BWSNIG is designed to consume minimal power during operation.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V.

Package and Quantity

The W25Q40BWSNIG is available in a small form factor package known as an SOIC-8. It is supplied in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Memory Capacity: 4 megabits (512 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 2.7V to 3.6V
• Maximum Clock Frequency: 104 MHz
• Read Speed: Up to 80 MHz
• Write Speed: Up to 10 MHz
• Erase Time: Sector erase time of 150 ms, block erase time of 400 ms

Detailed Pin Configuration

The W25Q40BWSNIG has a total of 8 pins arranged as follows:

1. Chip Select (/CS) - Active low input used to enable or disable the device.
2. Serial Clock (CLK) - Input for synchronizing data transfer.
3. Serial Data Input (DI) - Input for receiving data from the host device.
4. Serial Data Output (DO) - Output for transmitting data to the host device.
5. Write Protect (/WP) - Input used to protect the memory from write operations.
6. Hold (/HOLD) - Input used to pause ongoing operations.
7. VCC - Power supply voltage input.
8. Ground (GND) - Ground reference.

Functional Features

• Fast Read and Write Operations: The W25Q40BWSNIG offers high-speed data transfer, enabling quick access to stored information.
• Sector and Block Erase: It supports sector and block erase operations, allowing efficient management of memory space.
• Write Protection: The device includes a write protect pin that can be used to prevent accidental modification of stored data.
• Low Power Consumption: The W25Q40BWSNIG is designed to minimize power consumption, making it suitable for battery-powered devices.
• Wide Operating Voltage Range: It can operate within a wide voltage range, providing flexibility in various electronic systems.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Wide operating voltage range
• Compact package size

Disadvantages

• Limited to serial interface communication
• Relatively small memory capacity compared to other flash memory options

Working Principles

The W25Q40BWSNIG utilizes a serial peripheral interface (SPI) for communication with the host device. It stores data in non-volatile memory cells, which retain information even when power is removed. The device uses a combination of floating gate transistors and charge storage techniques to store and retrieve data.

Detailed Application Field Plans

The W25Q40BWSNIG is widely used in various applications, including: 1. Computer motherboards for storing BIOS firmware. 2. Mobile phones and tablets for storing operating system code. 3. Consumer electronics devices for data storage purposes. 4. Industrial control systems for program storage.

Detailed and Complete Alternative Models

1. W25Q80BVSNIG: 8 megabit (1 megabyte) capacity, similar characteristics and package.
2. W25Q16JVSNIG: 16 megabit (2 megabyte) capacity, similar characteristics and package.
3. W25Q32FVSNIG: 32 megabit (4 megabyte) capacity, similar characteristics and package.
4. W25Q64FVSNIG: 64 megabit (8 megabyte) capacity, similar characteristics and package.

These alternative models offer increased memory capacities while maintaining similar features and package options.

In conclusion, the W25Q40BWSNIG is a serial flash memory device with a capacity of 4 megabits. It offers fast read and write speeds, low power consumption, and a wide operating voltage range. The device finds applications in various electronic systems and has alternative models with higher memory capacities available