W29GL256SH9C TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Compact package size
  • Low power consumption
• Package: Surface Mount Technology (SMT) package
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 64 Megabits x 4 banks x 16 bits
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 90 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Sector Architecture: Uniform 4 KByte sectors with 32 KByte overlay blocks
• Write Protection: Hardware and Software
• Data Retention: 20 years (typical)

Pin Configuration

The W29GL256SH9C TR has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. DQ0 - Data Input/Output
18. DQ1 - Data Input/Output
19. DQ2 - Data Input/Output
20. DQ3 - Data Input/Output
21. DQ4 - Data Input/Output
22. DQ5 - Data Input/Output
23. DQ6 - Data Input/Output
24. DQ7 - Data Input/Output
25. DQ8 - Data Input/Output
26. DQ9 - Data Input/Output
27. DQ10 - Data Input/Output
28. DQ11 - Data Input/Output
29. DQ12 - Data Input/Output
30. DQ13 - Data Input/Output
31. DQ14 - Data Input/Output
32. DQ15 - Data Input/Output
33. CE# - Chip Enable Input
34. WE# - Write Enable Input
35. OE# - Output Enable Input
36. RP# - Ready/Busy Output
37. VCC - Power Supply
38. VSS - Ground
39. RESET# - Reset Input
40. BYTE# - Byte Enable Input
41. RY/BY# - Ready/Busy Output
42. WP#/ACC - Write Protect/Input Acceleration Input
43. NC - No Connection
44. NC - No Connection
45. NC - No Connection
46. NC - No Connection
47. NC - No Connection
48. NC - No Connection

Functional Features

• High-speed read and write operations for efficient data access
• Erase and program suspend functionality for enhanced flexibility
• Burst mode support for faster data transfer
• Uniform sector architecture for easy data management
• Hardware and software write protection for data security
• Reliable data retention for long-term storage

Advantages and Disadvantages

Advantages: - High-speed read and write operations - Compact package size - Low power consumption - Erase and program suspend functionality - Burst mode support - Reliable data retention

Disadvantages: - Limited capacity compared to higher-end flash memory options - Parallel interface may not be suitable for all applications

Working Principles

The W29GL256SH9C TR is based on NOR flash memory technology. It utilizes a parallel interface to communicate with the host device. The memory cells store data in a non-volatile manner, meaning the data is retained even when power is removed. The device supports high-speed read and write operations, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

The W29GL256SH9C TR can be used in various electronic devices that require reliable data storage and retrieval. Some potential application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation systems
3. Industrial: Embedded systems, control units