Triode/MOS tube/transistor/module
APM (Jonway Microelectronics)
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China Resources Huajing
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This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
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Infineon (Infineon)
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BORN (Born Semiconductor)
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ransistors, NPN 60V 600mA 300mW HFE=100~300, SOT-23
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YANGJIE (Yang Jie)
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YJD90N06A-F1-0000HF
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DIODES (US and Taiwan)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
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