onsemi (Ansemi)
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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Číslo dílu
NCP5106BDR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-8-150mil
Balení
taping
Počet balíků
2500
Popis
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Žádost o nabídku
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Na skladě 75348 PCS
Kontaktní informace
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Klíčová slova NCP5106BDR2G
NCP5106BDR2G Elektronické komponenty
NCP5106BDR2G Odbyt
NCP5106BDR2G Dodavatel
NCP5106BDR2G Distributor
NCP5106BDR2G Datová tabulka
NCP5106BDR2G Fotky
NCP5106BDR2G Cena
NCP5106BDR2G Nabídka
NCP5106BDR2G Nejnižší cena
NCP5106BDR2G Vyhledávání
NCP5106BDR2G Nákup
NCP5106BDR2G Chip