CGHV1F025S

Product Overview

Category: Semiconductor
Use: Power Amplifier
Characteristics: High power, high frequency
Package: SMD
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: 1 piece

Specifications

• Frequency Range: 0.03 - 2.5 GHz
• Output Power: 25 W
• Gain: 13 dB
• Efficiency: 55%
• Package Type: Ceramic/metal flange

Detailed Pin Configuration

• Pin 1: RF Input
• Pin 2: Ground
• Pin 3: VDD
• Pin 4: RF Output

Functional Features

• Wide frequency range
• High power output
• High efficiency
• Small form factor

Advantages and Disadvantages

Advantages: - High power density - Broadband capability - Enhanced thermal performance

Disadvantages: - Higher cost compared to traditional technologies - Sensitivity to voltage spikes

Working Principles

The CGHV1F025S utilizes GaN technology to achieve high power amplification across a wide frequency range. It operates by converting DC power into RF signals with high efficiency and low distortion.

Detailed Application Field Plans

1. Telecommunications: Used in base stations for wireless communication systems.
2. Radar Systems: Employed in radar transmitters for military and civilian applications.
3. Satellite Communication: Utilized in satellite ground stations for signal amplification.

Detailed and Complete Alternative Models

1. CGHV1F025S-AMP: Similar specifications with enhanced thermal management.
2. CGHV1F025S-MOD: Modular version allowing for easy integration into existing systems.

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This entry provides comprehensive information about the CGHV1F025S, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.