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IXFT60N50P3
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IXFT60N50P3

Product Overview

Category

The IXFT60N50P3 belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, high-speed switching device in various electronic applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The IXFT60N50P3 is typically available in TO-268 packaging.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

The IXFT60N50P3 is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 60A
  • On-Resistance: 0.16Ω
  • Gate Charge: 75nC
  • Avalanche Energy: 600mJ

Detailed Pin Configuration

The pin configuration of the IXFT60N50P3 typically includes the gate, drain, and source pins, which are arranged according to the specific package type.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient operation in switching circuits.
  • Low gate charge facilitates quick and precise control of the MOSFET.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications
  • Low on-resistance for improved efficiency
  • Fast switching speed for enhanced performance

Disadvantages

  • Higher gate charge compared to some alternative models
  • May require careful consideration of driving circuitry due to high voltage rating

Working Principles

The IXFT60N50P3 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate current flow between the drain and source terminals.

Detailed Application Field Plans

The IXFT60N50P3 is commonly used in: - Switch-mode power supplies - Motor control systems - Inverters and converters - High-power amplifiers - Industrial and automotive electronic systems

Detailed and Complete Alternative Models

Some alternative models to the IXFT60N50P3 include: - IRFP4668PbF - FDPF33N25T - STW45NM50FD

In conclusion, the IXFT60N50P3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power electronic applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IXFT60N50P3 v technických řešeních

  1. What is the maximum voltage rating of IXFT60N50P3?

    • The maximum voltage rating of IXFT60N50P3 is 500V.

  2. What is the maximum continuous drain current of IXFT60N50P3?

    • The maximum continuous drain current of IXFT60N50P3 is 60A.

  3. What type of package does IXFT60N50P3 come in?

    • IXFT60N50P3 comes in a TO-268 package.

  4. What is the typical on-state resistance of IXFT60N50P3?

    • The typical on-state resistance of IXFT60N50P3 is 0.19 ohms.

  5. Is IXFT60N50P3 suitable for high-frequency switching applications?

    • Yes, IXFT60N50P3 is suitable for high-frequency switching applications.

  6. What is the gate-source threshold voltage of IXFT60N50P3?

    • The gate-source threshold voltage of IXFT60N50P3 is typically 4V.

  7. Can IXFT60N50P3 be used in power supply designs?

    • Yes, IXFT60N50P3 can be used in power supply designs.

  8. Does IXFT60N50P3 have built-in protection features?

    • IXFT60N50P3 does not have built-in protection features and may require external circuitry for protection.

  9. What is the typical junction temperature range for IXFT60N50P3?

    • The typical junction temperature range for IXFT60N50P3 is -55°C to 150°C.

  10. Is IXFT60N50P3 RoHS compliant?

    • Yes, IXFT60N50P3 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.