STB11NM80T4

Introduction

The STB11NM80T4 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The STB11NM80T4 is used as a switching device in power supply, motor control, and lighting applications.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The STB11NM80T4 is available in a TO-263 package, providing efficient thermal dissipation and mechanical strength.
• Essence: The essence of this MOSFET lies in its ability to handle high currents and voltages with minimal power loss.
• Packaging/Quantity: It is typically supplied in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 800V
• Current Rating: 11A
• On-State Resistance (RDS(on)): 0.65Ω
• Gate-Source Voltage (VGS): ±30V
• Package Type: TO-263
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STB11NM80T4 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

| Pin Name | Description | |----------|----------------------| | G | Gate terminal | | D | Drain terminal | | S | Source terminal |

Functional Features

• Low On-State Resistance: Enables efficient power transfer and reduces conduction losses.
• High Switching Speed: Facilitates rapid switching operations, leading to improved system efficiency.
• Low Gate Charge: Allows for quick and precise control of the MOSFET, minimizing switching losses.

Advantages and Disadvantages

Advantages: 1. High efficiency in power conversion applications. 2. Low power dissipation due to low RDS(on). 3. Fast switching speed for improved system performance.

Disadvantages: 1. Sensitivity to overvoltage conditions. 2. Requires careful consideration of gate drive circuitry to avoid potential issues.

Working Principles

The STB11NM80T4 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can be switched on and off, regulating the power flow in the circuit.

Detailed Application Field Plans

The STB11NM80T4 finds extensive use in the following application fields: 1. Power Supply: Utilized in switch-mode power supplies for efficient voltage regulation. 2. Motor Control: Integrated into motor drive circuits to manage the speed and direction of motors. 3. Lighting: Employed in LED driver circuits for controlling the brightness of lighting systems.

Detailed and Complete Alternative Models

1. STB12NM50T4: Similar power MOSFET with lower on-state resistance.
2. STB10NK60ZT4: Alternative MOSFET offering higher voltage ratings.
3. STB8NC90ZT4: Comparable device with enhanced thermal performance.

In conclusion, the STB11NM80T4 power MOSFET serves as a crucial component in various electronic systems, delivering efficient power management and control capabilities across diverse applications.

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