Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IRFD123PBF

IRFD123PBF

Product Overview

Category

The IRFD123PBF belongs to the category of power MOSFETs.

Use

It is commonly used for switching applications in various electronic circuits.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • High power handling capability

Package

The IRFD123PBF is typically available in a TO-252 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic devices.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 4.5A
  • RDS(ON) (Max) @ VGS = 10V: 0.25Ω
  • Gate-Source Voltage (Vgs): ±20V
  • Power Dissipation (Pd): 2.5W

Detailed Pin Configuration

The IRFD123PBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate charge
  • Enhanced 30V VGS rating
  • Improved resistance to thermal cycling

Advantages

  • High efficiency due to low on-resistance
  • Suitable for high-frequency switching applications
  • Compact package size for space-constrained designs

Disadvantages

  • Limited voltage and current handling compared to higher-rated MOSFETs
  • May require heat sinking for certain high-power applications

Working Principles

The IRFD123PBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFD123PBF is widely used in the following applications: - Switching power supplies - Motor control circuits - LED lighting systems - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IRFD123PBF include: - IRF1010EZPbF - IRF540NPBF - IRF3205PBF - IRLB8721PbF

In conclusion, the IRFD123PBF power MOSFET offers efficient switching capabilities and is suitable for a range of electronic applications, making it a valuable component in modern electronic designs.

[Word count: 310]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRFD123PBF v technických řešeních

  1. What is the maximum drain-source voltage of IRFD123PBF?

    • The maximum drain-source voltage of IRFD123PBF is 100V.
  2. What is the continuous drain current rating of IRFD123PBF?

    • The continuous drain current rating of IRFD123PBF is 0.36A.
  3. What is the on-state resistance (RDS(on)) of IRFD123PBF?

    • The on-state resistance (RDS(on)) of IRFD123PBF is typically 4.5 ohms.
  4. Can IRFD123PBF be used for switching applications?

    • Yes, IRFD123PBF is suitable for low power switching applications.
  5. What is the gate-source threshold voltage of IRFD123PBF?

    • The gate-source threshold voltage of IRFD123PBF is typically 2V.
  6. Is IRFD123PBF suitable for battery-powered applications?

    • Yes, IRFD123PBF's low power characteristics make it suitable for battery-powered applications.
  7. Does IRFD123PBF have built-in protection features?

    • IRFD123PBF does not have built-in protection features and may require external circuitry for protection.
  8. What is the operating temperature range of IRFD123PBF?

    • The operating temperature range of IRFD123PBF is -55°C to 150°C.
  9. Can IRFD123PBF be used in automotive applications?

    • IRFD123PBF is not specifically designed for automotive applications and may not meet automotive industry standards.
  10. What are some common alternatives to IRFD123PBF for similar applications?

    • Some common alternatives to IRFD123PBF for similar applications include IRF510, IRF520, and IRF530 MOSFETs.