onsemi (Ansemi)
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
NCD57000DWR2G Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.

NCD57000DWR2G

Half Bridge IGBT Sink 7.1A Source 7.8A Isolated High Current and High Efficiency IGBT Gate Driver with Internal Galvanic Isolation.
Číslo dílu
NCD57000DWR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-16-300mil
Balení
taping
Počet balíků
1000
Popis
The NCD57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCD57000 can accommodate 5V and 3.3V signals on the input side, and a wide range of bias voltages on the driver side, including negative voltage capability. The NCD57000 provides > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCD57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 69307 PCS
Kontaktní informace
Klíčová slova NCD57000DWR2G
NCD57000DWR2G Elektronické komponenty
NCD57000DWR2G Odbyt
NCD57000DWR2G Dodavatel
NCD57000DWR2G Distributor
NCD57000DWR2G Datová tabulka
NCD57000DWR2G Fotky
NCD57000DWR2G Cena
NCD57000DWR2G Nabídka
NCD57000DWR2G Nejnižší cena
NCD57000DWR2G Vyhledávání
NCD57000DWR2G Nákup
NCD57000DWR2G Chip