onsemi (Ansemi)
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NCV5106ADR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCV5106ADR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Číslo dílu
NCV5106ADR2G
Kategorie
Power Chip > Gate Driver IC
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-8
Balení
taping
Počet balíků
2500
Popis
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Žádost o nabídku
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Na skladě 93007 PCS
Kontaktní informace
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Klíčová slova NCV5106ADR2G
NCV5106ADR2G Elektronické komponenty
NCV5106ADR2G Odbyt
NCV5106ADR2G Dodavatel
NCV5106ADR2G Distributor
NCV5106ADR2G Datová tabulka
NCV5106ADR2G Fotky
NCV5106ADR2G Cena
NCV5106ADR2G Nabídka
NCV5106ADR2G Nejnižší cena
NCV5106ADR2G Vyhledávání
NCV5106ADR2G Nákup
NCV5106ADR2G Chip