onsemi (Ansemi)
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NSS40302PDR2G 1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A

NSS40302PDR2G

1 NPN and 1 PNP 40V 3A low VCE(sat) transistors, complementary, 40 V, 6.0 A
Číslo dílu
NSS40302PDR2G
Kategorie
Triode/MOS Tube/Transistor > Triode(BJT)
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SOIC-8
Balení
taping
Počet balíků
2500
Popis
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors are surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. Typical applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 72302 PCS
Kontaktní informace
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Klíčová slova NSS40302PDR2G
NSS40302PDR2G Elektronické komponenty
NSS40302PDR2G Odbyt
NSS40302PDR2G Dodavatel
NSS40302PDR2G Distributor
NSS40302PDR2G Datová tabulka
NSS40302PDR2G Fotky
NSS40302PDR2G Cena
NSS40302PDR2G Nabídka
NSS40302PDR2G Nejnižší cena
NSS40302PDR2G Vyhledávání
NSS40302PDR2G Nákup
NSS40302PDR2G Chip