Toshiba Semiconductor and Storage
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TK5A60W,S4VX
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TK5A60W,S4VX

MOSFET N CH 600V 5.4A TO-220SIS
Číslo dílu
TK5A60W,S4VX
Výrobce/značka
Toshiba Semiconductor and Storage
Série
DTMOSIV
Stav sekce
Active
Obal
Tube
Technika
MOSFET (Metal Oxide)
Provozní teplota
150°C (TJ)
Typ montáže
Through Hole
Balíček/pouzdro
TO-220-3 Full Pack
Dodavatelský balíček zařízení
TO-220SIS
Ztráta energie (max.)
30W (Tc)
Typ FET
N-Channel
Funkce FET
Super Junction
Odvod ke zdroji napětí (Vdss)
600V
Proud - kontinuální vypouštění (Id) @ 25°C
5.4A (Ta)
Aktivní Rds (Max) @ ID, Vgs
900 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
3.7V @ 270µA
Cena brány (Qg) (Max) @ Vgs
10.5nC @ 10V
Vstupní kapacita (Ciss) (Max) @ Vds
380pF @ 300V
Napětí pohonu (Max Active Rds, Min Active Rds)
10V
VGS (max.)
±30V
Žádost o nabídku
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Na skladě 17309 PCS
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