Toshiba Semiconductor and Storage
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TK8A10K3,S5Q
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TK8A10K3,S5Q

MOSFET N-CH 100V 8A TO-220SIS
Číslo dílu
TK8A10K3,S5Q
Výrobce/značka
Toshiba Semiconductor and Storage
Série
U-MOSIV
Stav sekce
Active
Obal
Tube
Technika
MOSFET (Metal Oxide)
Provozní teplota
150°C (TJ)
Typ montáže
Through Hole
Balíček/pouzdro
TO-220-3 Full Pack
Dodavatelský balíček zařízení
TO-220SIS
Ztráta energie (max.)
18W (Tc)
Typ FET
N-Channel
Funkce FET
-
Odvod ke zdroji napětí (Vdss)
100V
Proud - kontinuální vypouštění (Id) @ 25°C
8A (Ta)
Aktivní Rds (Max) @ ID, Vgs
120 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Cena brány (Qg) (Max) @ Vgs
12.9nC @ 10V
Vstupní kapacita (Ciss) (Max) @ Vds
530pF @ 10V
Napětí pohonu (Max Active Rds, Min Active Rds)
10V
VGS (max.)
±20V
Žádost o nabídku
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Na skladě 27802 PCS
Kontaktní informace
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