onsemi (Ansemi)
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MBRM110LT3G 10V 1A 415mV@2A Schottky diodePower rectifier, 1.0 A, 10 V

MBRM110LT3G

10V 1A 415mV@2A Schottky diodePower rectifier, 1.0 A, 10 V
Číslo dílu
MBRM110LT3G
Kategorie
diode > Schottky diode
Výrobce/značka
onsemi (Ansemi)
Encapsulation
POWERMITE
Balení
taping
Počet balíků
12000
Popis
POWERMITEPower encapsulation This Schottky diode Powermite uses the Schottky diode barrier principle, using barrier metal and epitaxial structure, which can produce optimized forward voltage drop-reverse current trade-off. This advanced encapsulation technology can be used to achieve energy-efficient miniature, space-saving devices. Due to its unique thermal design, Powermite has the same thermal performance as SMA, but with a 50% smaller footprint and a height profile of < 1.1 mm, one of the smallest in the industry. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size performance are critical.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 56230 PCS
Kontaktní informace
Klíčová slova MBRM110LT3G
MBRM110LT3G Elektronické komponenty
MBRM110LT3G Odbyt
MBRM110LT3G Dodavatel
MBRM110LT3G Distributor
MBRM110LT3G Datová tabulka
MBRM110LT3G Fotky
MBRM110LT3G Cena
MBRM110LT3G Nabídka
MBRM110LT3G Nejnižší cena
MBRM110LT3G Vyhledávání
MBRM110LT3G Nákup
MBRM110LT3G Chip