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NVMD6N03R2G

NVMD6N03R2G

MOSFET 2N-CH 30V 6A 8SOIC
Číslo dílu
NVMD6N03R2G
Výrobce/značka
ON Semiconductor
Série
-
Stav sekce
Obsolete
Obal
Tape & Reel (TR)
Provozní teplota
-55°C ~ 150°C (TJ)
Typ montáže
Surface Mount
Balíček/pouzdro
8-SOIC (0.154", 3.90mm Width)
Výkon - Max
1.29W
Dodavatelský balíček zařízení
8-SOIC
Typ FET
2 N-Channel (Dual)
Funkce FET
Logic Level Gate
Odvod ke zdroji napětí (Vdss)
30V
Proud - kontinuální vypouštění (Id) @ 25°C
6A
Aktivní Rds (Max) @ ID, Vgs
32 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Cena brány (Qg) (Max) @ Vgs
30nC @ 10V
Vstupní kapacita (Ciss) (Max) @ Vds
950pF @ 24V
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 10995 PCS
Kontaktní informace
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Klíčová slova NVMD6N03R2G
NVMD6N03R2G Elektronické komponenty
NVMD6N03R2G Odbyt
NVMD6N03R2G Dodavatel
NVMD6N03R2G Distributor
NVMD6N03R2G Datová tabulka
NVMD6N03R2G Fotky
NVMD6N03R2G Cena
NVMD6N03R2G Nabídka
NVMD6N03R2G Nejnižší cena
NVMD6N03R2G Vyhledávání
NVMD6N03R2G Nákup
NVMD6N03R2G Chip