onsemi (Ansemi)
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NGTD13T65F2WP Trench Field Stop 650V IGBT 650V 30A FS2 Die

NGTD13T65F2WP

Trench Field Stop 650V IGBT 650V 30A FS2 Die
Číslo dílu
NGTD13T65F2WP
Kategorie
Transistor/MOS tube/transistor > IGBT tube/module
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SMD
Balení
bagged
Počet balíků
1
Popis
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 53187 PCS
Kontaktní informace
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Klíčová slova NGTD13T65F2WP
NGTD13T65F2WP Elektronické komponenty
NGTD13T65F2WP Odbyt
NGTD13T65F2WP Dodavatel
NGTD13T65F2WP Distributor
NGTD13T65F2WP Datová tabulka
NGTD13T65F2WP Fotky
NGTD13T65F2WP Cena
NGTD13T65F2WP Nabídka
NGTD13T65F2WP Nejnižší cena
NGTD13T65F2WP Vyhledávání
NGTD13T65F2WP Nákup
NGTD13T65F2WP Chip