onsemi (Ansemi)
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NGTD17T65F2WP Trench Field Stop 650V IGBT 600V 40A FS2 Die

NGTD17T65F2WP

Trench Field Stop 650V IGBT 600V 40A FS2 Die
Číslo dílu
NGTD17T65F2WP
Kategorie
Transistor/MOS tube/transistor > IGBT tube/module
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SMD
Balení
bagged
Počet balíků
1
Popis
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 56699 PCS
Kontaktní informace
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Klíčová slova NGTD17T65F2WP
NGTD17T65F2WP Elektronické komponenty
NGTD17T65F2WP Odbyt
NGTD17T65F2WP Dodavatel
NGTD17T65F2WP Distributor
NGTD17T65F2WP Datová tabulka
NGTD17T65F2WP Fotky
NGTD17T65F2WP Cena
NGTD17T65F2WP Nabídka
NGTD17T65F2WP Nejnižší cena
NGTD17T65F2WP Vyhledávání
NGTD17T65F2WP Nákup
NGTD17T65F2WP Chip