onsemi (Ansemi)
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NGTD20T120F2WP Trench Field Stop 1.2kV IGBT 1200V 20A FS2 Die

NGTD20T120F2WP

Trench Field Stop 1.2kV IGBT 1200V 20A FS2 Die
Číslo dílu
NGTD20T120F2WP
Kategorie
Transistor/MOS tube/transistor > IGBT tube/module
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SMD
Balení
bagged
Počet balíků
1
Popis
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 91492 PCS
Kontaktní informace
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Klíčová slova NGTD20T120F2WP
NGTD20T120F2WP Elektronické komponenty
NGTD20T120F2WP Odbyt
NGTD20T120F2WP Dodavatel
NGTD20T120F2WP Distributor
NGTD20T120F2WP Datová tabulka
NGTD20T120F2WP Fotky
NGTD20T120F2WP Cena
NGTD20T120F2WP Nabídka
NGTD20T120F2WP Nejnižší cena
NGTD20T120F2WP Vyhledávání
NGTD20T120F2WP Nákup
NGTD20T120F2WP Chip