onsemi (Ansemi)
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NGTD23T120F2SWK IGBT 1200V 25A FS2 Bare Die

NGTD23T120F2SWK

IGBT 1200V 25A FS2 Bare Die
Číslo dílu
NGTD23T120F2SWK
Kategorie
Transistor/MOS tube/transistor > IGBT tube/module
Výrobce/značka
onsemi (Ansemi)
Encapsulation
SMD
Balení
bagged
Počet balíků
1
Popis
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Žádost o nabídku
Vyplňte prosím všechna požadovaná pole a klikněte na " Předložit ", budeme vás kontaktovat za 12 hodin e-mailem. Pokud máte nějaký problém, zanechte prosím zprávy nebo e-mail [email protected], budeme odpovídat co nejdříve.
Na skladě 98917 PCS
Kontaktní informace
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onsemi (Ansemi)
Klíčová slova NGTD23T120F2SWK
NGTD23T120F2SWK Elektronické komponenty
NGTD23T120F2SWK Odbyt
NGTD23T120F2SWK Dodavatel
NGTD23T120F2SWK Distributor
NGTD23T120F2SWK Datová tabulka
NGTD23T120F2SWK Fotky
NGTD23T120F2SWK Cena
NGTD23T120F2SWK Nabídka
NGTD23T120F2SWK Nejnižší cena
NGTD23T120F2SWK Vyhledávání
NGTD23T120F2SWK Nákup
NGTD23T120F2SWK Chip